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Pathfinding & Device Development

The most advanced, flexible solutions for advanced semiconductor device and technology development

Semiconductor device manufacturers and designers are pushing the boundaries of physics.  Devices are being engineered at the atomic level. The number of technology options under investigation is increasing as the probability of technical and commercial success of any of them is becoming less and less certain.  FEI provides the most advanced toolsets that enable this advanced R&D to continue on the 10, 7 and even the sub 7nm technology nodes.

Challenges in Device Development

As semiconductor device manufacturers and designers move from planar devices to structures built with complex 3D shapes, with air gaps, or with novel materials the complexity of manufacturing and gate level failure analysis increases dramatically.  Identifying defects or resolving material interfaces in a FIB cut cross-section requires highly precise endpointing, surface preparation, and SEM imaging performance.  For atomic level defects or compositional analysis, creating ultra-thin lamella for transmission electron (TEM) or atom probe (APM) microscopy that capture the correct region of interest (ROI) presents other challenges.  Due to limited floorspace and budgets, labs are continually pushing to have best in class performance for each of these sample workflows in one sample preparation system.

  • Ultra thin (<10nm) samples
  • New materials (eg III-V)
  • Complex deposition techniques
  • New analytical techniques (eg. atom probe)
  • Atomic level engineering
  • High resolution strain measurement

FEI Solutions for Pathfinding

The Helios NanoLab 460F1 is designed to meet the varied challenges found in advanced semiconductor failure analysis labs by combining the highest resolution scanning electron microscope (Elstar+UC SEM) and focused ion beam (Tomahawk FIB) columns on the market today with the most advanced sample manipulation capabilities.  In-situ, low kV (30kV) STEM imaging reduces the time to high resolution, high contrast imaging.  New, high precision deposition and etching capabilities are mated with enhanced sample control and an extensive automation suite to deliver the right solution for any challenge your lab might encounter.

  • Most flexible DualbeamTM - Helios NanoLab 460F1
  • Atomic engineering TEMs - Themis & Metrios
  • Sub 14nm circuit edit - V400ACE

Documents

Site-specific metrology, inspection, and failure analysis of three-dimensional interconnects using focused ion beam technology

In this article, the Fraunhofer Institute and FEI show how the plasma-FIB is a very attractive tool for the analysis of relatively large, complex interconnect structures, such 3DICs, without any need for mechanical preparation steps.

Download document

Quick Links

Low keV FIB Applications for Circuit Edit

Characterizing New Materials with Electron Microscopy

Backside Circuit Edit on Full-Thickness Silicon Devices

Products for Pathfinding & Device Development

Themis S S/TEM for Semiconductors
The Themis S S/TEM is an 80–200kV scanning / transmission electron microscope (S/TEM) designed for high-speed imaging and analysis of semiconductor devices.
Helios G4 FX DualBeam for Semiconductors
The FEI Helios G4 FX DualBeam™ combines the industry-leading, highest-resolution Elstar+UC SEM with the most advanced Phoenix FIB for best-in-class imaging and milling performance. Added to this field-proven, fourth-generation Helios platform are the most advanced in situ lift-out and sample manipulation components, an innovative multiple gas delivery system, a dramatically improved 3Å-resolution, low-kV STEM detector, and customizable recipes, creating the most capable and flexible failure analysis instrument available today.
Helios G4 HX DualBeam for Semiconductors
The FEI Helios G4 HX DualBeam™ microscope combines the industry-leading, highest-resolution, highest-contrast Elstar+UC SEM with the most advanced Phoenix FIB for best-in-class imaging and milling performance. Specifically designed for high-throughput, high-quality, ultra-thin TEM lamella preparation, the Helios G4 HX DualBeam comes with the FEI EasyLift EX Nanomanipulator and new Automated QuickFlip shuttle for precise, accurate, and repeatable in situ sample lift-out and manipulations. When used in conjunction with the FEI iFast Starter Recipes for automated TEM sample preparation, even novice operators are able to repeatedly create high-quality, ultra-thin lamellas with confidence.
Helios G4 PFIB CXe DualBeam for Semiconductors

The Helios G4 PFIB CXe DualBeam™ System provides unique capabilities to enable advanced failure analysis of 3D packages and damage-free delayering of semiconductor devices, in addition to a wide range of other large area FIB processing applications.

Helios G4 PFIB HXe DualBeam for Semiconductors

The Helios G4 PFIB HXe DualBeam™ System provides unique capabilities to enable damage-free delayering of 10nm semiconductor devices and advanced failure analysis of 3D packages, in addition to a wide range of other large area FIB processing applications.

Helios G4 PFIB UXe DualBeam for Semiconductors

The Helios G4 PFIB UXe DualBeam™ System provides unique capabilities to enable damage-free delayering of semiconductor devices and advanced failure analysis of 3D packages, in addition to a wide range of other large area FIB processing applications.

OptiFIB Taipan Focused Ion Beam for Semiconductors
To meet the stringent circuit edit requirements of the 10nm node, the OptiFIB Taipan Focused Ion-Beam system was engineered to meet the challenges of advanced designs and processes. A new coaxial ion-photon column, electronics, chamber and stage enable a highly controlled beam profile and current, accurate navigation and ion beam placement, and reliable end-pointing. An updated chemical delivery system provides industry-leading etch and deposition chemistries.
Metrios TEM for Semiconductors
Advanced logic and memory manufacturing processes are becoming more reliant on fast turnaround of precise structural and analytical data to quickly calibrate tool sets, diagnose yield excursions and optimize process yields.  At technology nodes below 28nm, conventional SEM or optical based analysis and inspection tools cannot provide useful data. The FEI Metrios TEM automates the basic TEM operation and measurement procedures and minimizes the requirements for specialized operator training. Its advanced automated metrology routines deliver significantly greater precision than manual methods. The Metrios TEM is designed to deliver high volume TEM data, with accurate and repeatable operation - at the lowest cost-per-sample.
ExSolve WTP DualBeam for Semiconductors
The FEI ExSolve wafer TEM prep (WTP) DualBeam dramatically reduces the cost and increases the speed of sample preparation, providing semiconductor and data storage manufacturers with quick and easy access to the data they need to verify and monitor process performance.
V400ACE Focused Ion Beam for Semiconductors
The FEI V400ACE FIB is specifically designed to meet the challenges of advanced designs and processes: smaller geometries, higher circuit densities, exotic materials and complex interconnect structures. The V400ACE FIB can be configured for backside editing with an optional IR microscope and bulk silicon trenching package.

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