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Electron Microscopy Solutions

Pathfinding & Device Development

The most advanced, flexible solutions for advanced semiconductor device and technology development

Semiconductor device manufacturers and designers are pushing the boundaries of physics.  Devices are being engineered at the atomic level. The number of technology options under investigation is increasing as the probability of technical and commercial success of any of them is becoming less and less certain.  FEI provides the most advanced toolsets that enable this advanced R&D to continue on the 10, 7 and even the sub 7nm technology nodes.

Challenges in Device Development

As semiconductor device manufacturers and designers move from planar devices to structures built with complex 3D shapes, with air gaps, or with novel materials the complexity of manufacturing and gate level failure analysis increases dramatically.  Identifying defects or resolving material interfaces in a FIB cut cross-section requires highly precise endpointing, surface preparation, and SEM imaging performance.  For atomic level defects or compositional analysis, creating ultra-thin lamella for transmission electron (TEM) or atom probe (APM) microscopy that capture the correct region of interest (ROI) presents other challenges.  Due to limited floorspace and budgets, labs are continually pushing to have best in class performance for each of these sample workflows in one sample preparation system.

  • Ultra thin (<10nm) samples
  • New materials (eg III-V)
  • Complex deposition techniques
  • New analytical techniques (eg. atom probe)
  • Atomic level engineering
  • High resolution strain measurement

FEI Solutions for Pathfinding

The Helios NanoLab 460F1 is designed to meet the varied challenges found in advanced semiconductor failure analysis labs by combining the highest resolution scanning electron microscope (Elstar+UC SEM) and focused ion beam (Tomahawk FIB) columns on the market today with the most advanced sample manipulation capabilities.  In-situ, low kV (30kV) STEM imaging reduces the time to high resolution, high contrast imaging.  New, high precision deposition and etching capabilities are mated with enhanced sample control and an extensive automation suite to deliver the right solution for any challenge your lab might encounter.

  • Most flexible DualbeamTM - Helios NanoLab 460F1
  • Atomic engineering TEMs - Themis & Metrios
  • Sub 14nm circuit edit - V400ACE

Documents

Site-specific metrology, inspection, and failure analysis of three-dimensional interconnects using focused ion beam technology

In this article, the Fraunhofer Institute and FEI show how the plasma-FIB is a very attractive tool for the analysis of relatively large, complex interconnect structures, such 3DICs, without any need for mechanical preparation steps.

Download document

Products for Pathfinding & Device Development

Apreo SEM for Materials Science
The Apreo SEM's revolutionary compound lens design combines electrostatic and magnetic immersion technology to yield unprecedented resolution and signal selection. This makes the Apreo SEM the platform of choice for research on nanoparticles, catalysts, powders and nanodevices, without compromising on magnetic sample performance.
Talos F200X TEM for Materials Science
The Thermo Scientific™ Talos F200X scanning/transmission electron microscope combines outstanding high-resolution S/TEM and TEM imaging with industry-leading energy dispersive x-ray spectroscopy (EDS) signal detection and 3D chemical characterization with compositional mapping. The Talos F200X S/TEM allows for the fastest and most precise EDS analysis in all dimensions (1D-4D), along with the best HRTEM imaging with fast navigation for dynamic microscopy. Talos F200X S/TEM does all this while also providing the highest stability and longest uptime.
Metrios TEM for Semiconductors
Advanced logic and memory manufacturing processes are becoming more reliant on fast turnaround of precise structural and analytical data to quickly calibrate tool sets, diagnose yield excursions and optimize process yields.  At technology nodes below 28nm, conventional SEM or optical based analysis and inspection tools cannot provide useful data. The FEI Metrios TEM automates the basic TEM operation and measurement procedures and minimizes the requirements for specialized operator training. Its advanced automated metrology routines deliver significantly greater precision than manual methods. The Metrios TEM is designed to deliver high volume TEM data, with accurate and repeatable operation - at the lowest cost-per-sample.
Helios G4 PFIB CXe DualBeam for Semiconductors

The Helios G4 PFIB CXe DualBeam™ System provides unique capabilities to enable advanced failure analysis of 3D packages and damage-free delayering of semiconductor devices, in addition to a wide range of other large area FIB processing applications.

Helios G4 PFIB HXe DualBeam for Semiconductors

The Helios G4 PFIB HXe DualBeam™ System provides unique capabilities to enable damage-free delayering of 10nm semiconductor devices and advanced failure analysis of 3D packages, in addition to a wide range of other large area FIB processing applications.

Helios G4 PFIB UXe DualBeam for Semiconductors

The Helios G4 PFIB UXe DualBeam™ System provides unique capabilities to enable damage-free delayering of semiconductor devices and advanced failure analysis of 3D packages, in addition to a wide range of other large area FIB processing applications.

Helios G4 UC for Materials Science

Helios G4 UC is part of the fourth generation of the industry-leading Helios DualBeam family. It is carefully designed to meet the needs of scientists and engineers, combining the innovative Elstar electron column with high-current UC+ technology for extreme high-resolution imaging and the highest materials contrast with the superior Tomahawk ion column for the fastest, easiest, and most precise high-quality sample preparation. 

Helios G4 CX DualBeam for Materials Science
The latest technological innovations of the FEI Helios G4 CX DualBeam™ microscope, in combination with the easiest to use, most comprehensive software and FEI's application expertise, allow Helios G4 CX with optional AS&V4 software for the highest-quality, fully automated acquisition of multi-modal 3D datasets.
Helios G4 FX DualBeam for Semiconductors
The FEI Helios G4 FX DualBeam™ combines the industry-leading, highest-resolution Elstar+UC SEM with the most advanced Phoenix FIB for best-in-class imaging and milling performance. Added to this field-proven, fourth-generation Helios platform are the most advanced in situ lift-out and sample manipulation components, an innovative multiple gas delivery system, a dramatically improved 3Å-resolution, low-kV STEM detector, and customizable recipes, creating the most capable and flexible failure analysis instrument available today.
Helios G4 HX DualBeam for Semiconductors
The FEI Helios G4 HX DualBeam™ microscope combines the industry-leading, highest-resolution, highest-contrast Elstar+UC SEM with the most advanced Phoenix FIB for best-in-class imaging and milling performance. Specifically designed for high-throughput, high-quality, ultra-thin TEM lamella preparation, the Helios G4 HX DualBeam comes with the FEI EasyLift EX Nanomanipulator and new Automated QuickFlip shuttle for precise, accurate, and repeatable in situ sample lift-out and manipulations. When used in conjunction with the FEI iFast Starter Recipes for automated TEM sample preparation, even novice operators are able to repeatedly create high-quality, ultra-thin lamellas with confidence.
Helios G4 UX DualBeam for Materials Science
The latest technological innovations of the FEI Helios G4 DualBeam™ microscope, in combination with the easiest to use, most comprehensive software and FEI's application expertise, allow for the fastest and easiest preparation of site-specific, ultra-thin HR-S/TEM samples for a wide range of materials.
Scios 2 DualBeam for Materials Science

The Thermo Scientific™ Scios™ 2 DualBeam™ is an ultra-high-resolution analytical FIB-SEM system that provides outstanding sample preparation and 3D characterization performance for the widest range of samples, including magnetic and non-conductive materials. 

OptiFIB Taipan Focused Ion Beam for Semiconductors
To meet the stringent circuit edit requirements of the 10nm node, the OptiFIB Taipan Focused Ion-Beam system was engineered to meet the challenges of advanced designs and processes. A new coaxial ion-photon column, electronics, chamber and stage enable a highly controlled beam profile and current, accurate navigation and ion beam placement, and reliable end-pointing. An updated chemical delivery system provides industry-leading etch and deposition chemistries.
V400ACE Focused Ion Beam for Semiconductors
The FEI V400ACE FIB is specifically designed to meet the challenges of advanced designs and processes: smaller geometries, higher circuit densities, exotic materials and complex interconnect structures. The V400ACE FIB can be configured for backside editing with an optional IR microscope and bulk silicon trenching package.

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