nProber III for Semiconductors

Fault localization and transistor characterization

The nProber III allows users to characterize individual transistor performance down to the 7nm node. nProber III can also be used to localize a wide variety of electrical faults prior to extracting thin sectional samples for physical failure analysis in a transmission electron microscope (TEM). The high accuracy fault localization provided by the nProber III can dramatically increase TEM fault imaging success rates. nProber III productivity and ease of use make it an ideal solution for optimized failure analysis workflows.

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Key Benefits

  • Improve time to results with the most productive, easiest to use nanoprober on the market
  • Nanoprobing improves TEM efficiency by localizing faults prior to the lamella cut
  • Automated processes reduce the skill required to run the instrument
Eight probes enable butterfly, DC bit cell and bit cell pulsing applications on advanced node devices.