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Electron Microscopy Solutions

Meridian WS-DP System for Semiconductors

Full-wafer electrical fault analysis under production conditions, accelerating development and ramp of advanced devices.

With time-to-yield being critical to profitability, it is too costly for advanced foundries, integrated device manufacturers and fabless companies to  wait until after dicing and packaging to identify the source of electrical faults. The FEI Meridian WS-DP system enables faster defect localization by using production testers, load boards, and probe cards.

All diagnostic options from the Meridian product line are available for the Meridian WS-DP, including: LVx, emission, LADA, and OBIRCH.

The Meridian WS-DP system provides:
  • Ability to identify systematic defects
  • Significantly increased electrical  measurement throughput
  • Improved defect localization success rate
  • Reduced physical analysis time
Capabilities:
  • Standard best-in-class InGaAs-based emission detection or
  • High sensitivity extended-wavelength DBX-based emission detection
  • Patented, industry-proven "Point & Click" Solid Immersion Lens (SIL)
  • Rapid die-to-die indexing
  • Dynamic fault coverage with high-speed ATE interface
  • Optional laser scanning microscope (LSM) for static and dynamic analysis
  • Compatibility with most popular third-party EDA applications




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Options

Laser voltage imaging

Laser voltage imaging (LVI), shows the physical locations of transistors that are active at a specific frequency on the Meridian-IV.

CW laser voltage probing

Continuous wave laser voltage probing (CW-LVP) acquires functional waveform data on the Meridian-IV system.

 

2017 Nobel Prize in Chemistry

Congratulations to the winners of the 2017 Nobel Prize in Chemistry. Three scientists; Dr. Jacques Dubochet, Dr. Joachim Frank, and Dr. Richard Henderson, were awarded the prize for their developments within Cryo-Electron Microscopy.

We are extremely proud of what these researchers and the structural biology community have achieved.