The FEI Meridian M system system uses high sensitivity broadband DBX™ photon emission and Static Laser Stimulation techniques to pinpoint the location of electrical faults. Given results from wafer sort / chip probe, the Meridian M system delivers localization suitable for nanoprobing or imaging techniques such as SEM or TEM.
Custom-designed optics, a set of user-selectable wavelength ranges and low background noise allow Meridian M to be optimized for a variety of routine or challenging fault types, like large-area process variation in advanced memory devices that leads to anomalous leakage; high resistivity wordline to wordline or bitline to bitline shorts within memory cells; resistive faults in low voltage GPUs and other low-voltage logic circuits; and any weakly emitting faults requiring long integration time.
The Meridian M system accommodates full wafers in addition to packaged die, allowing FA engineers to compare good die to bad die, aiding interpretation of complex emission images.
- Highest sensitivity emission detection, for low VDD and low leakage
- Advanced constant-current and constant-voltage Static Laser Stimulation (SLS) techniques
- Ability to detect thermal faults, including challenging high-ohmic shorts and electromigration