Meridian M System for Semiconductors

Static Optical Fault Isolation System for Wafers and Packaged Parts

The FEI Meridian M system system uses high sensitivity broadband DBX™ photon emission and Static Laser Stimulation techniques to pinpoint the location of electrical faults. Given results from wafer sort / chip probe, the Meridian M system delivers localization suitable for nanoprobing or imaging techniques such as SEM or TEM.

Custom-designed optics, a set of user-selectable wavelength ranges and low background noise allow Meridian M to be optimized for a variety of routine or challenging fault types, like large-area process variation in advanced memory devices that leads to anomalous leakage; high resistivity wordline to wordline or bitline to bitline shorts within memory cells; resistive faults in low voltage GPUs and other low-voltage logic circuits; and any weakly emitting faults requiring long integration time.

The Meridian M system accommodates full wafers in addition to packaged die, allowing FA engineers to compare good die to bad die, aiding interpretation of complex emission images.


  • Highest sensitivity emission detection, for low VDD and low leakage
  • Advanced constant-current and constant-voltage Static Laser Stimulation (SLS) techniques
  • Ability to detect thermal faults, including challenging high-ohmic shorts and electromigration

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High Sensitivity Photon Emission

High-sensitivity photon emission (1) using standard photon-emission detection and (2) adding broadband thermal emission capability. Comparison of the images indicates the location of the root-cause defect.

Full-featured Static Laser Stimulation

High-ohmic wordline-to-wordline short identified by constant-voltage SLS. The Fault Diagnostics (FDx) system on Meridian M delivers high signal-to-noise across a wide range of operating modes.