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Electron Microscopy Solutions

Meridian IV System for Semiconductors

Industry-leading Sensitivity for Fault Localization and Analysis

FEI's Meridian-IV system is the preferred choice for developers of advanced, low-voltage, high-density semiconductor devices requiring best-in-class performance and the ability to diagnose wide ranging failure modes, including parametric failures and those resulting from design-process marginalities.

Capabilities

  • Standard best-in-class InGaAs-based emission detection or
  • High sensitivity extended-wavelength DBX-based emission detection
  • Patented, industry-proven "Point & Click" Solid Immersion Lens (SIL)
  • Inverted platform for easy ATE direct docking
  • Compatibility with most popular third-party EDA applications
  • >Optional laser scanning microscope (LSM) for static and dynamic analysis
  • Works easily with packaged parts and wafer/die backside samples
  • Optional 350x long working distance SIL




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Parametric defects are uncovered only when the failing device is operated under a specific set of operations parameters-typically a combination of voltage, clock speed, and temperature. Implementing strong yet flexible detection technology coupled with a set of advanced analytical methodologies allows for the introduction of new, dynamic applications such as Logic State Mapping (LoSM) and Dynamic Laser Stimulation (DLS). Meridian facilitates the development of the most advanced dynamic applications and techniques while maintaining the capability to isolate static faults.

Configuration & Features

Photon emission microscopy (PEM) on the Meridian platform is based on an optimized combination of a high sensitivity InGaAs or DBX camera and high numerical aperture (NA) aberration-corrected optics. The Meridian-IV system provides high resolution through-silicon imaging for backside device analysis. Low noise and high sensitivity enable emission data with unmatched signal-to-noise ratios, resulting in rapid, transistor-level fault detection. The DBX configuration provides industry-leading results even on sub-0.5 volt devices.
The laser scanning microscope (LSM) option transforms the Meridian into a high-resolution, high-contrast confocal laser scanning system optimized for both static and dynamic failure analysis. Static Laser Stimulation (SLS) applications such as OBIRCH, OBIC, and Seebeck Effect Imaging (SEI) identify the sources of shorts and resistive faults, complementing emission-based techniques.
The advanced Sierra user environment and analysis software package includes the ability to construct high quality, high magnification image mosaics. Individual high magnification images are acquired and then seamlessly integrated to form a high resolution image of the device over a large field of view.
 

2017 Nobel Prize in Chemistry

Congratulations to the winners of the 2017 Nobel Prize in Chemistry. Three scientists; Dr. Jacques Dubochet, Dr. Joachim Frank, and Dr. Richard Henderson, were awarded the prize for their developments within Cryo-Electron Microscopy.

We are extremely proud of what these researchers and the structural biology community have achieved.