DualBeam Microscope

Helios PFIB for Semiconductors

Large Area Sample Preparation and Analysis in semiconductor failure analysis, process development, and process control laboratories

The Helios™ PFIB is the world's most advanced DualBeam Plasma FIB platform for large area deprocessing to enable electrical fault isolation of advanced process ICs and advanced failure analysis of 3D packages. The Helios PFIB system combines the innovative Helios Elstar™ with UC technology electron column for high-resolution, high-contrast imaging. Its high-performance Vion Xenon plasma ion column provides fast and precise large area sample cross-sectioning and deprocessing. Combined with FEI's proprietary Si Trenching, Dx and DE chemistries offer a unique Deprocess/Delayering solution for Electrical Fault Isolation of latest process technology devices. The Helios PFIB also offers optional Navigation and Inspection capabilities, such as infrared/visible light microscope and analytical capabilities such as EBSD and EDX.




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FEI's exclusive Plasma FIB DualBeam™ - Pushing the limits of extreme high-resolution and high-throughput characterization in 2D and 3D.

The Helios PFIB DualBeam features FEI's most recent advances in Plasma Focused Ion Beam and field emission SEM (FESEM) technologies and their combined use. FEI's first plasma-based DualBeam is designed for high-throughput, large-volume processing, combined with extreme high-resolution imaging in both 2D and 3D. For large-scale cross-sectioning, large-volume 3D data collection, or large-scale patterning, the Helios Plasma FIB DualBeam provides the highest quality of data in the shortest time.

PFIB prepared - 300um x 300um Cross-section of a 2.5D IC with Si Interposer
900um x 14um x 27um Large Chunk - Silicon IC sample

Key Benefits 

  • High-performance Elstar electron column with UC monochromator technology for nanometer SEM image resolution
  • Xenon Ion Plasma FIB  column for high volume,  high-speed milling and cross-sectioning
  • Exceptional low kV ion beam performance enables material sensitivity and low sample preparation damage
  • Optional MultiChem or GIS gas delivery systems provides the most advanced capabilities for electron and ion beam induced deposition and etching on DualBeams
  • Proprietary chemistries for deprocessing of Copper Interconnect Metallization in regular, low-k and ultra low-k dielectrics. Plasma FIB based chemistries and recipes for milling Advanced Packaging materials
  • Optional EasyLift nanomanipulator enables precise, site-specific preparation of large area lamellae while promoting high user confidence and yield
  • Five-axis, piezo-driven stage with load lock provides full coverage of up to 70 mm sampled
  • Backed by FEI's world class knowledge and expertise in advanced failure analysis for DualBeam applications 
900um x 14um x 27um Large Chunk - Liftout with EasyLift
PFIB image of 600um x 100um Large Area Cross-section of a 3D IC with Cu TSVs
PFIB Zoomed-in View of Copper TSVs in Silicon