|   Electron Microscopy Solutions

    
Electron Microscopy Solutions

Celebrating Helios #1000

20+ Years of DualBeam™ Innovation

1993 DualBeam 620
1995 DualBeam 820
1997 DualBeam 830
1999 Altura 835
2000 Strata DualBeam 235
2001 Expida 1265
2003 Strata DB-STEM
Nova NanoLab
Quanta3D 200i
2004 Strata 400/400STEM
G1

Helios G1

600/400/400S

First generation Helios with improved SEM for cross-section imaging and end point detection.

Discover more
2006
2006 Quanta3D FEG
G2

Helios G2

650/450/450S

XHR SEM combined with new Tomahawk FIB for improved TEM sample prep and cross-section imaging.

Discover more
2010
2011 Versa 3D
G3

Helios G3

660/460HP/460F1

Integrated hardware and automated recipes enable higher throughput, higher quality TEM sample prep.

Discover more
2013
2013 Scios
G4

Helios G4

UX/HX/FX

First DualBeam to create sub 7nm thick TEM samples.

Discover more
2015
2016

Congratulations and Thanks to the FEI team!

Explore the Future of DualBeam

Discover more

Helios G1 600/400/400S

SEM

  • New Elstar column with double magnetic shielding and constant power technology
  • High resolution interlaced SPI
  • 1.4nm @ 1kV, opt WD

FIB

  • High resolution Sidewinder with fast milling and low kV cleaning capability
  • 5.0 nm @ 30kV, coincident WD

Applications

  • Novel Flipstage and retractable STEM detector
  • AutoTEM G2
  • New PIA
  • ≥32nm semiconductor devices
Flipstage 1 showing STEM endpointing and imaging
Site specific cross section of logic device

Helios G2 650/450/450S

SEM

  • Elstar with UC (monochromator) technology
  • Beam decel to reduce probe size
  • Scanning presets and interlaced scanning
  • 0.9nm @ 1kV, opt WD

FIB

  • Tomahawk with Time of Flight (TOF) technology
  • Currents up to 65nA for high throughput milling
  • 4.5nm @ 30kV, coincident WD

Applications

  • Fast switching for near real-time UHR imaging & milling
  • Nav-Cam+ for sample navigation
  • ICE detector for improved materials contrast and lifetime
  • ≥22nm semicondutor devices
Fast switching improvements

FIB spot size improvements

Tomahawk (G2)Sidewinder (G1)
Improved materials contrast on 32nm logic
Mixed BF + Inverse DF STEM

Helios G3 660/460HP/460F1

SEM

  • Improved detection and signal filtering
  • Simultaneous imaging of SE and BSE signals
  • 0.7nm @ 1kV, opt WD

FIB

  • 4.0nm @ 30 kV, coincident WD

Applications

  • Integrated EasyLift nanomanipulator for in-situ liftout
  • MultiChem advanced gas delivery
  • High throughput TEM prep recipes
  • Flipstage 3 for faster STEM imaging
  • Auto-LX (Automated in-situ liftout)
  • ≥14nm semiconductor devices
Automated in-situ sample liftout (Auto-LX)

SEM column and detector improvements in G3

UHR SEM cross-sectional view of 32nm Flash device after 1kV FIB final clean
Low kV imaging critical to seeing surface details of 22nm FinFET test structures

Helios G4 UX/HX/FX

SEM

  • 2nd gen UC+ technology reduces energy spread below 0.2eV for up to 100pA
  • 0.7nm @ 1kV, opt WD
  • 3Å resolution STEM @ 30kV

FIB

  • Phoenix with superior low kV cleaning enables 7nm thick lamella
  • Improved patterning files
  • 500nm @ 500V, coincident WD

Applications

  • Faster time to usable data with 3Å resolution STEM
  • Automated recipes for faster preparation of inverted TEM samples
  • ≥7nm semiconductor devices
Inverted TEM sample prep
7nm thick lamella showing contacts above 14nm FinFET

Comparison images of graphite at 1kV

Tomahawk FIB (G3)
Phoenix FIB (G4)

Comparison images of positioning cleaning cross-sections at 500V

Tomahawk FIB (G3)
Phoenix FIB (G4)

Explore the Future of DualBeam

Helios #1000 and FEI final assemblers

Electron Microscopy Solutions

We have updated the appearance of FEI.com with the Thermo Fisher Scientific brand. This transition is an exciting moment as we continue to advance our world-leading electron microscopy solutions.