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The UltraDry X-ray detector provides superior resolution at incredibly high collection rates. Silicon drift detector technology establishes the foundation for the UltraDry design. Advanced field-effect transistor (FET) integration and a proprietary preamplifier stage create the extraordinary operating space that enables the superior performance of the UltraDry detector. By dramatically shrinking the size of the FET and by integrating it directly into the crystal structure, the device capacitance that leads to electronic noise is virtually eliminated.
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