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Electron Microscopy Solutions

Delineation Etch

Gas chemistry (TFA) solution for decoration of FIB-prepared cross-sections, preferably mounted on GIS port 1.

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Key Benefits:

  • Complete solution
  • Discriminative etch between (poly) silicon and oxide
  • Remove insulating materials, similar to Insulator Enhanced Etch (XeF2), but without spontaneous etching of silicon and poly-silicon
  • Improves cross-section imaging by selective etching: shows the individual layers much better by inducing slight topography
  • Used for Decoration of FIB-prepared cross-sections
  • Gas flow control based on accurate temperature setting
  • Homogeneous temperature for full gas path
  • Local gas density fluctuations at sample < 6 % over a width of 100 um
  • Double container safety control
  • 100 % free of any cross-contamination
  • Instantaneous gas delivery
  • No gaseous precursors

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