Tecnai Osiris™ Transmission Electron Microscope
The Tecnai Osiris is a fully digital, high-performance 200kV S/TEM system, designed to deliver outstanding performance in all imaging and analytical modes. The combination of a high brightness field emitter and windowless EDX detection using Silicon Drift Detector (SDD) technology lead to unmatched count rates for a given beam current, significantly improved sensitivity for light elements and all in all smart detection of the generated analytical signals.
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X-FEG High Brightness Gun
X-FEG is an FEI-designed electron source that combines the benefits of a Schottky FEG (high total current, long-term stability and long lifetime) with the brightness of a Cold FEG, without increased vacuum requirements or tip-flashing. X-FEG delivers more beam current in small probes while keeping the convergence angle small. This provides improved signal-to-noise ratios in STEM and EDX/EELS, improved spatial coherence for holography and HRTEM, and higher lateral resolution in chemical analysis (EDX and EELS). |
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Super-X Fast EDX Solution
Super-X is FEI’s proprietary EDX detector system with superior sensitivity and ultimate performance in EDX spectroscopy and fast EDX mapping. Four Silicon Drift Detectors (SDDs) are perfectly integrated in the new A-TWIN (Analytical TWIN) objective lens and offer maximum collection efficiency with a solid angle of 0.9 srad. This large solid angle provides quick time-to-data even for low-intensity EDX signals. The high-sensitivity windowless system allows the detection of all elements down to and including boron. The collection time for elemental maps in fast-mapping mode can be reduced from hours to minutes or from minutes to seconds, compared to standard solutions. |
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FS-1 Fast EELS Solution
The FS-1 is a new EELS spectrometer, exclusive to FEI, providing efficient data collection combined with full energy resolution. EELS provides complementary analytical information to EDX, since EELS is more sensitive to light elements, and EELS gives insight into chemical bonding and valence states which are not accessible via EDX. |
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SmartCAM CCD Camera
The SmartCam, a high-speed digital camera, and its innovative user interface improve the handling of all applications and allow the user to work away from the microscope in an ergonomic environment. |
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Multiloader Connectivity Solution
This solution provides a 10x reduction in thermal drift, due to loading a small metal cartridge (low thermal mass) containing the sample into the TEM, as opposed to a standard sample holder (large thermal mass). Net effect is a 10x reduction in time-to-data, as one would normally be waiting for the sample to stop drifting before imaging/analysis. |
Core Technical Highlights
- Fully digital 200 kV TEM and STEM system including the HAADF detector
- X-FEG high brightness Schottky FEG provides beam currents in the range of Cold FEG and improves spatial resolution in analytics due to smaller convergence angles
- Super-X windowless EDX detector system with SDD technology significantly increases the detection efficiency and the sensitivity for low-energy EDX counts and clears the way for really fast EDX data collection and large field of view elemental mapping
- SmartCam digital search-and-view camera improves the handling of all applications of the Tecnai Osiris and prepares it for remote operation
- Large combined dewar for Super-X and cold trap (about 4-day cooling capacity) frees the user from daily liquid nitrogen refills and cryo-cycles
- Workstation including 2x 24" widescreen LCD monitors and table improves the operator comfort and allows relaxed working in an ergonomic environment
- Double-tilt, high-visibility low-background specimen holder maximizes the collection efficiency in combination with the Super-X EDX detector system
- Automatic aperture system in combination with the SmartCam prepares the instrument for remote operation
- Oil-free vacuum system ensures that contamination from any pumping oil is eliminated
HRTEM: 45 nm Logic Device
HRTEM image of a 45 nm semiconductor logic device, showing atomic resolution in the gate region. A lower magnification image of the gate is inset for reference. |
SuperX: 45 nm
Chemical analysis of the gate region of a 45 nm semiconductor logic device using FEI’s exclusive SuperX EDX technology. These 200x200 pixel elemental maps showcase the power of SuperX: fast mapping (around 9 minutes for the entire experiment) combined with great sensitivity for both light and heavy elements. |
SuperX: Si Multilayer
Chemical analysis of a Si multilayer structure using FEI’s exclusive SuperX EDX technology. These ultra-fast (60 seconds total time) 350x50 pixel elemental strip maps clearly distinguish between the various different Si compounds-something that is not possible from the HAADF STEM contrast alone. Sample courtesy of FELMI-ZfE Graz, Austria. |
SuperX: FinFET
Chemical analysis of a FinFET device using FEI’s exclusive SuperX EDX technology. These 128x166 pixel elemental maps showcase the power of SuperX: fast mapping (around 2 minutes for the entire experiment) combined with great sensitivity for both light and heavy elements. Sample courtesy of NXP Research. |