High-k dielectric transistors boost the performance in semiconductor devices. The numbers of elements that improve the performance of modern transistor have increased dramatically; therefore, it is required not only to image the nanostructures, but also to obtain 3D chemical information in order to understand and optimize the transistor’s properties. This example shows a 32 nm gate length transistor with 9 different elements. The 3D chemical map shows the elemental properties and their structure, providing a better understanding of the relationship between that and the functional performance of the device. The complex 3D structure of nickel-silicide at the end of the tomogram sequence is an especially good example of the gain in information achieved through 3D EDX tomography.
Courtesy FEI Company NanoPort
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High-k Dielectric Transistor
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