The FEI UHV scanning electron microscope (SEM) subsystem provides a multi-purpose, nanometer scale beam deflection and imaging system. The electron beam is controlled by electrostatic deflection and is suitable for imaging, Auger systems, sample illumination and a range of other applications.
UHV SEM Column Applications
- Nanoscale imaging
- STM tip positioning
- Sample imaging
- Auger analysis
- E-beam lithography
- In-situ sample energizing
The UHV SEM has an outstanding track record of applications with both OEM customers and end users in UHV environments. The column mounts with a 4.5" Conflat flange, and the UHV SEM's narrow 8" vacuum extension provides easy integration into systems with detectors and components near the sample area. A differential pumping aperture separates the source regions vacuum from the sample regions vacuum. A separate ion pump is supplied to maintain source area vacuum.
Configured for Your Needs
The UHV SEM is equipped with an easy-to-maintain electronically variable aperture for ease of use and ability to operate a wide range of beam currents. With the turn of a dial, the column can go from operating in a low-current, high-resolution mode to a high-current, analytical mapping mode.
Easy to Use
The column's Schottky field emission electron source is simple to install and provides trouble-free operation throughout its lifetime. The column isolation valve separates the source region from the sample chamber, allowing the emitter to be changed without disturbing the system vacuum. Conversely, the system vacuum can be vented without disturbing the source area vacuum.
BDS (Beam Deflection System) Electronics
Deflection electronics, signal amplification and high voltage power are all controlled through FEI’s new beam delivery system BDS electronics. Integrated graphical user interface (GUI) and electronics provide full beam control.
- Scanning (internally or externally generated for synchronization to customer supplied detector)
- Digital imaging (secondary electron)
- Image processing