Defect detection and analysis has been critical to process development and control from the earliest days of integrated circuit manufacturing. For defect characterization and root cause analysis, it is time-to-answer that matters.
FEI's DualBeam™ systems deliver a powerful combination of tool automation, industry-leading electron imaging, unsurpassed focused ion beam (FIB) milling and proprietary beam chemistry technology. For 3D analysis of advanced process defects, dual-beam defect characterization gives critical root cause analysis in the shortest time possible.
The FEI tool designed expressly for semiconductor defect analysis: