Semiconductor manufacturers are faced with market and competitive demands for increased device performance. Shrinking geometries and new materials often require the resolution and analysis capabilities of scanning electron microscopes (SEMs) and in some cases transmission electron microscopes (TEMs).
Failure analysis and material characterization techniques such as cross-sectioning, device modification and TEM analysis are made possible with FEI's systems, which combine most advanced ion and electron columns and a powerful combination of defect navigation, cross-section preparation and data collection. These rich features allow support laboratories to quickly locate, expose and analyze critical defects for increased control and improved yields.
FEI instruments for semiconductor failure analysis:
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