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Defect Analysis

Defect detection and analysis has been critical to process development and control from the earliest days of integrated circuit manufacturing. For defect characterization and root cause analysis, it is time-to-answer that matters.

FEI's electron imaging deliver a powerful combination of tool automation, industry-leading electron imaging, unsurpassed focused ion beam (FIB) milling and proprietary beam chemistry technology. For 3D analysis of advanced process defects, dual-beam defect characterization gives critical root cause analysis in the shortest time possible.

FEI instruments for semiconductor defect analysis: 

More Applications for Electronics

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DRAM Memory with Elemental Map - 110nm technology node

DRAM Memory with Elemental Map - 110nm technology node

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