FEI Connectivity Solutions
Shrinking device geometries drive greater transmission electron microscope (TEM) use at semiconductor labs to better support the development and monitoring of advanced semiconductor manufacturing processes. However, atomic-scale imaging and analysis of barrier layers, critical interfaces, gate structures, dopant profiles and silicon strain requires ultrathin samples that can take days to prepare using conventional techniques.
Ultimate Imaging with Ultimate Throughput
The FEI Connectivity Solutions for Ultimate Throughput and Ultimate Imaging is an innovative new process that links the operations of sample preparation, lift-out, transfer, and loading of ultra-thin TEM lamellae for imaging and analysis.
FEI Connectivity Solutions can reduce your “wafers-to-atoms” time from days to hours and dramatically improve your lab’s efficiency and yields.
Instruments in the Solution
For advanced semiconductor manufacturing, a single day of unnecessary delay can cost millions of dollars. Speeding-up TEM sample preparation from two days to less than two hours has a significant impact to the bottom line.
The FEI Connectivity Solutions improve the efficiency and quality of sample preparation by linking the operations of preparation, lift-out, transfer, loading and imaging/analysis tools.
Automated Sample Preparation with CLM+
The CLM+ Wafer DualBeam prepares high quality samples for an automated sample extraction system, virtually eliminating sample transfer risk.
Secure Sample Liftout with TEM Link 150
The TEM Link 150 extraction system provides secure, automated sample liftout of lamella created by the CLM+ Wafer DualBeam system. It rapidly extracts TEM samples from full wafers and places them onto standard TEM grids for ex-situ imaging and analysis.
Transfering and Loading for TEM Imaging
The Multi-Loader Single Cartridge Cassette is used to move samples from the TEMLink system to the FEI Cartridge Transfer Station (FCTS). From the FCTS, cartridges of samples can be taken to the Helios NanoLab™ 400S for additional thinning, or to the Titan3™ G2 60-300 for imaging and analysis.
After preparing the TEM sample with the CLM+™ Wafer DualBeam™ you are ready to create an ultra-thin lamella to achieve the best quality image in the TEM. The Helios NanoLab™ 400S offers the highest performance thinning available in a small-stage DualBeam™ system. A fast, simultaneous milling and imaging feature permits real time monitoring of the image during thinning, for ultimate defect localization and minimal sidewall damage. Once the sample is thinned, an integrated STEM detector allows for collection of high resolution, high material contrast images at up to 30kV. The lamella can then be transferred to a TEM for ultimate imaging and analysis. Imaging and Analysis
The Titan3™ G2 60-300 S/TEM is the ultimate high-resolution imaging and analysis tool for any lab. With a voltage range of 60–300 kV, the Titan3 provides a wide range of materials contrast and analytical options. The system is completely enclosed to dampen acoustic, electro-magnetic and temperature variations. This enclosure enables the collection of sub-angstrom resolution images even in noisy lab environments.